HYG065N03LR1D HUAYI

Symbol Micros: THYG065n03lr1d
Contractor Symbol:
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 30V; 20V; 55A; 10,9mOhm; 42W; -55°C ~ 175°C; Similar to: IRLR8726PBF; IRLR8726TRLPBF; IRLR8726TRPBF;
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Parameters
Open channel resistance: 10,9mOhm
Max. drain current: 55A
Max. power loss: 42W
Case: TO252 (DPACK)
Manufacturer: HUAYI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG065N03LR1D RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
300 pcs.
Quantity of pcs. 3+ 10+ 50+ 300+ 1500+
Net price (EUR) 0,2968 0,1893 0,1330 0,1131 0,1075
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Packaging:
300
Open channel resistance: 10,9mOhm
Max. drain current: 55A
Max. power loss: 42W
Case: TO252 (DPACK)
Manufacturer: HUAYI
Max. drain-source voltage: 30V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD