HYG065N07NS1P HUAYI

Symbol Micros: THYG065n07ns1p
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Case : TO220
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Transistor N-Channel MOSFET; 70V; 20V; 100A; 6,5Ohm; 125W; -55°C ~ 175°C; Similar to: IRF3205PBF;
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Parameters
Open channel resistance: 6,5mOhm
Max. drain current: 100A
Max. power loss: 125W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 70V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG065N07NS1P RoHS Case style: TO220 Datasheet
In stock:
15 pcs.
Quantity of pcs. 2+ 5+ 20+ 100+ 400+
Net price (EUR) 0,8225 0,6122 0,4533 0,3809 0,3575
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Packaging:
20/100
Open channel resistance: 6,5mOhm
Max. drain current: 100A
Max. power loss: 125W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 70V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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