HYG065N15NS1W HUAYI

Symbol Micros: THYG065n15ns1w

401424

THYG065n15ns1w

Contractor Symbol:

Case : TO247

Datasheet

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Transistor N-Channel MOSFET; 150V; 20V; 165A; 7,5mOhm; 375W; -55°C ~ 175°C;

Parameters

Open channel resistance:	7,5mOhm
Max. drain current:	165A
Max. power loss:	375W
Case:	TO247
Manufacturer:	HUAYI
Max. drain-source voltage:	150V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG065N15NS1W RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,0217	2,5967	2,3469	2,2254	2,1577

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	7,5mOhm
Max. drain current:	165A
Max. power loss:	375W
Case:	TO247
Manufacturer:	HUAYI
Max. drain-source voltage:	150V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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