HYG090N06LS1P HUAYI

Symbol Micros: THYG090n06ls1p
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
Transistor N-Channel MOSFET; 60V; 20V; 62A; 15,5mOhm; 75W; -55°C ~ 175°C; Similar to: IRLZ44PBF; IRLZ44NPBF;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: 15,5mOhm
Max. drain current: 62A
Max. power loss: 75W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG090N06LS1P RoHS Case style: TO220 Datasheet
In stock:
50 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,9089 0,5701 0,4463 0,4206 0,3949
Add to comparison tool
Packaging:
50/100
Open channel resistance: 15,5mOhm
Max. drain current: 62A
Max. power loss: 75W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols