HYG090N06LS1P HUAYI

Symbol Micros: THYG090n06ls1p

401450

THYG090n06ls1p

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 62A; 15,5mOhm; 75W; -55°C ~ 175°C; Similar to: IRLZ44PBF; IRLZ44NPBF;

Parameters

Open channel resistance:	15,5mOhm
Max. drain current:	62A
Max. power loss:	75W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG090N06LS1P RoHS Case style: TO220 Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	50+	100+	400+
Net price (EUR)	0,9089	0,5701	0,4463	0,4206	0,3949

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	15,5mOhm
Max. drain current:	62A
Max. power loss:	75W
Case:	TO220
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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