HYG101N10LA1D HUAYI
Symbol Micros:
THYG101n10la1d
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 100V; 20V; 15A; 125mOhm; 51,7W; -55°C ~ 175°C; Similar to: IRLR120PBF; IRLR120TRLPBF; IRLR120TRPBF; IRLR120TRRPBF; IRLR120NPBF; IRLR120NTRLPBF; IRLR120NTRPBF;
Parameters
| Open channel resistance: | 125mOhm |
| Max. drain current: | 15A |
| Max. power loss: | 51,7W |
| Case: | TO252 (DPACK) |
| Manufacturer: | HUAYI |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 125mOhm |
| Max. drain current: | 15A |
| Max. power loss: | 51,7W |
| Case: | TO252 (DPACK) |
| Manufacturer: | HUAYI |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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