HYG180N10LS1D HUAYI

Symbol Micros: THYG180n10ls1d
Contractor Symbol:
Case : TO252 (DPACK)
Technical drawing Add to favourites
Transistor N-Channel MOSFET; 100V; 20V; 45A; 30mOhm; 71,4W; -55°C ~ 175°C;
Parameters
Open channel resistance: 30mOhm
Max. drain current: 45A
Max. power loss: 71,4W
Case: TO252 (DPACK)
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG180N10LS1D RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
85 pcs.
Quantity of pcs. 2+ 15+ 100+ 300+ 1000+
Net price (EUR) 0,4884 0,2700 0,2135 0,2012 0,1949
Add to comparison tool
Packaging:
100
Open channel resistance: 30mOhm
Max. drain current: 45A
Max. power loss: 71,4W
Case: TO252 (DPACK)
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols