HYG180N10LS1P HUAYI

Symbol Micros: THYG180n10ls1p
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Case : TO220
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Transistor N-Channel MOSFET; 100V; 20V; 50A; 34mOhm; 93,7W; -55°C ~ 175°C; Similar to: IRF540PBF; IRF540NPBF;
Parameters
Open channel resistance: 34mOhm
Max. drain current: 50A
Max. power loss: 93,7W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG180N10LS1P RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,6974 0,4368 0,3428 0,3241 0,3029
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Packaging:
50/100
Open channel resistance: 34mOhm
Max. drain current: 50A
Max. power loss: 93,7W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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