HYG210N06LA1S HUAYI

Symbol Micros: THYG210n06la1s

401502

THYG210n06la1s

Contractor Symbol:

Case : SOP08

Datasheet

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Transistor N-Channel MOSFET; 60V; 20V; 9A; 23mOhm; 3W; -55°C ~ 175°C; Similar to: IRF7478PBF; IRF7478TRPBF;

Parameters

Open channel resistance:	23mOhm
Max. drain current:	9A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HUAYI Manufacturer part number: HYG210N06LA1S RoHS Case style: SOP08t/r Datasheet

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,4624	0,2802	0,2148	0,1938	0,1845

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Packaging:
200 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	23mOhm
Max. drain current:	9A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	HUAYI
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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