HYG210P06LQ1P HUAYI

Symbol Micros: THYG210p06lq1p
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Case : TO220
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Transistor P-Channel MOSFET; 60V; 20V; 45A; 34mOhm; 107W; -55°C ~ 175°C; Similar to: IRF4905PBF;
Parameters
Open channel resistance: 34mOhm
Max. drain current: 45A
Max. power loss: 107W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Manufacturer:: HUAYI Manufacturer part number: HYG210P06LQ1P RoHS Case style: TO220 Datasheet
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 500+
Net price (EUR) 1,0802 0,7185 0,5941 0,5354 0,5143
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Packaging:
20/100
Open channel resistance: 34mOhm
Max. drain current: 45A
Max. power loss: 107W
Case: TO220
Manufacturer: HUAYI
Max. drain-source voltage: 60V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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