HYG350N06LA1D HUAYI
Symbol Micros:
THYG350n06la1d
Case : TO252 (DPACK)
Transistor N-Channel MOSFET; 60V; 20V; 26A; 44mOhm; 42,8W; -55°C ~ 175°C; Similar to: IRLR024PBF; IRLR024TRLPBF; IRLR024TRPBF; IRLR024NPBF; IRLR024NTRLPBF; IRLR024NTRPBF; IRLR024NTRRPBF;
Parameters
| Open channel resistance: | 44mOhm |
| Max. drain current: | 26A |
| Max. power loss: | 42,8W |
| Case: | TO252 (DPACK) |
| Manufacturer: | HUAYI |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 44mOhm |
| Max. drain current: | 26A |
| Max. power loss: | 42,8W |
| Case: | TO252 (DPACK) |
| Manufacturer: | HUAYI |
| Max. drain-source voltage: | 60V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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