HYG450P06LA1D HUAYI
Symbol Micros:
THYG450p06la1d
Case : TO252 (DPACK)
Transistor P-Channel MOSFET; 60V; 20V; 20A; 62mOhm; 37,5W; -55°C ~ 175°C; Similar to: IRFR5305PBF; IRFR5305TRLPBF; IRFR5305TRPBF; IRFR5305TRRPBF; IRFR9024NPBF; IRFR9024NTRLPBF; IRFR9024NTRPBF; IRFR9024NTRRPBF;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Open channel resistance: | 62mOhm |
Max. drain current: | 20A |
Max. power loss: | 37,5W |
Case: | TO252 (DPACK) |
Manufacturer: | HUAYI |
Max. drain-source voltage: | 60V |
Transistor type: | P-MOSFET |
Open channel resistance: | 62mOhm |
Max. drain current: | 20A |
Max. power loss: | 37,5W |
Case: | TO252 (DPACK) |
Manufacturer: | HUAYI |
Max. drain-source voltage: | 60V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
Add Symbol
Cancel
All Contractor Symbols