IGP30N60H3

Symbol Micros: TIGP30n60h3

125065

TIGP30n60h3

Contractor Symbol:

Case : TO220

Datasheet

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Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1

Parameters

Gate charge:	165nC
Max. dissipated power:	187W
Max. collector current:	60A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGP30N60H3 RoHS Case style: TO220 Datasheet

In stock:

33 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	3,0339	2,5223	2,2211	2,0298	1,9581

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Gate charge:	165nC
Max. dissipated power:	187W
Max. collector current:	60A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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