IGP30N60H3
Symbol Micros:
TIGP30n60h3
Case : TO220
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C; IGP30N60H3XKSA1
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Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 165nC |
Max. dissipated power: | 187W |
Max. collector current: | 60A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO220 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IGP30N60H3 RoHS
Case style: TO220
Datasheet
In stock:
33 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
---|---|---|---|---|---|
Net price (EUR) | 3,0088 | 2,5014 | 2,2027 | 2,0130 | 1,9419 |
Manufacturer:: Infineon
Manufacturer part number: IGP30N60H3XKSA1
Case style: TO220
External warehouse:
500 pcs.
Quantity of pcs. | 50+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 1,9419 |
Gate charge: | 165nC |
Max. dissipated power: | 187W |
Max. collector current: | 60A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO220 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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