IGW15N120H3FKSA1

Symbol Micros: TIGW15n120h3

Case : TO247

IGBT 1200V 30A 217W

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Parameters

Gate charge:	75nC
Max. dissipated power:	217W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

Gate charge:	75nC
Max. dissipated power:	217W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	SMD