IGW15N120H3FKSA1

Symbol Micros: TIGW15n120h3

118999

TIGW15n120h3

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 1200V 30A 217W

Parameters

Gate charge:	75nC
Max. dissipated power:	217W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW15N120H3FKSA1 Case style: TO247  

External warehouse:

697 pcs.

Quantity of pcs.	30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,8913

Add inquiry (RFQ)

Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IGW15N120H3FKSA1 Case style: TO247  

External warehouse:

93 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,6520

Add to comparison tool Add inquiry (RFQ)

Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	75nC
Max. dissipated power:	217W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	SMD

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