IGW25N120H3

Symbol Micros: TIGW25n120h3
Contractor Symbol:
Case : TO247
50A; 1200V; 326W; IGBT IGW25N120H3FKSA1
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Parameters
Gate charge: 115nC
Max. dissipated power: 326W
Max. collector current: 50A
Max collector current (impulse): 100A
Forvard volatge [Vgeth]: 5,0V ~ 6,5V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW25N120H3FKSA1 RoHS Case style: TO247 Datasheet
In stock:
29 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,3488 4,4992 3,9880 3,7324 3,5897
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Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IGW25N120H3FKSA1 Case style: TO247  
External warehouse:
898 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 3,5897
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IGW25N120H3FKSA1 Case style: TO247  
External warehouse:
434 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 3,8417
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 115nC
Max. dissipated power: 326W
Max. collector current: 50A
Max collector current (impulse): 100A
Forvard volatge [Vgeth]: 5,0V ~ 6,5V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 1200V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V