IGW25N120H3
Symbol Micros:
TIGW25n120h3
Case : TO247
50A; 1200V; 326W; IGBT IGW25N120H3FKSA1
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 115nC |
Max. dissipated power: | 326W |
Max. collector current: | 50A |
Max collector current (impulse): | 100A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IGW25N120H3FKSA1 RoHS
Case style: TO247
Datasheet
In stock:
29 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
---|---|---|---|---|---|
Net price (EUR) | 5,3488 | 4,4992 | 3,9880 | 3,7324 | 3,5897 |
Manufacturer:: Infineon
Manufacturer part number: IGW25N120H3FKSA1
Case style: TO247
External warehouse:
898 pcs.
Quantity of pcs. | 1+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 3,5897 |
Manufacturer:: Infineon
Manufacturer part number: IGW25N120H3FKSA1
Case style: TO247
External warehouse:
434 pcs.
Quantity of pcs. | 1+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 3,8417 |
Gate charge: | 115nC |
Max. dissipated power: | 326W |
Max. collector current: | 50A |
Max collector current (impulse): | 100A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
Add Symbol
Cancel
All Contractor Symbols