IGW25N120H3
Symbol Micros:
TIGW25n120h3
Case : TO247
Transistor IGBT ; 1200V; 20V; 50A; 100A; 326W; 5,0V~6,5V; 115nC; -40°C~175°C; IGW25N120H3FKSA1
Parameters
| Gate charge: | 115nC |
| Max. dissipated power: | 326W |
| Max. collector current: | 50A |
| Max collector current (impulse): | 100A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IGW25N120H3FKSA1 RoHS
Case style: TO247
Datasheet
In stock:
27 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
|---|---|---|---|---|---|
| Net price (EUR) | 5,4253 | 4,5635 | 4,0450 | 3,7858 | 3,6410 |
Manufacturer:: Infineon
Manufacturer part number: IGW25N120H3FKSA1
Case style: TO247
External warehouse:
437 pcs.
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 3,6410 |
| Gate charge: | 115nC |
| Max. dissipated power: | 326W |
| Max. collector current: | 50A |
| Max collector current (impulse): | 100A |
| Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 1200V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
Add Symbol
Cancel
All Contractor Symbols