IGW30N60T

Symbol Micros: TIGW30n60t
Contractor Symbol:
Case : TO247
Transistor IGBT ; 600V; 20V; 45A; 90A; 187W; 4,1V~5,7V; 167nC; -40°C~175°C; IGW30N60TFKSA1
Parameters
Gate charge: 167nC
Max. dissipated power: 187W
Max. collector current: 45A
Max collector current (impulse): 90A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW30N60TFKSA1 RoHS Case style: TO247 Datasheet
In stock:
25 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,3333 2,7542 2,4097 2,2446 2,1512
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Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IGW30N60TFKSA1 Case style: TO247  
External warehouse:
240 pcs.
Quantity of pcs. 90+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,1512
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 167nC
Max. dissipated power: 187W
Max. collector current: 45A
Max collector current (impulse): 90A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT