IGW40N60H3FKSA1

Symbol Micros: TIGW40n60h3
Contractor Symbol:
Case : TO247
IGBT 600V 80A 306W
Parameters
Gate charge: 223nC
Max. dissipated power: 306W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IGW40N60H3FKSA1 RoHS Case style: TO247 Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,1441 2,7932 2,5841 2,4772 2,4191
Add to comparison tool
Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IGW40N60H3FKSA1 Case style: TO247  
External warehouse:
65 pcs.
Quantity of pcs. 60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,4191
Add to comparison tool
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IGW40N60H3FKSA1 Case style: TO247  
External warehouse:
165 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,4191
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 223nC
Max. dissipated power: 306W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT