IGW40N60H3FKSA1
Symbol Micros:
TIGW40n60h3
Case : TO247
IGBT 600V 80A 306W
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Gate charge: | 223nC |
| Max. dissipated power: | 306W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 160A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Item in delivery
Estimated date:
2024-08-14
Quantity of pcs.: 30
| Gate charge: | 223nC |
| Max. dissipated power: | 306W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 160A |
| Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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