IGW40N65F5FKSA1

Symbol Micros: TIGW40n65f5

119003

TIGW40n65f5

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 650V 74A 255W

Parameters

Gate charge:	95nC
Max. dissipated power:	250W
Max. collector current:	74A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	3,2V ~ 4,8V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW40N65F5FKSA1 RoHS Case style: TO247 Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,6625	3,0800	2,7286	2,5564	2,4574

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IGW40N65F5FKSA1 Case style: TO247  

External warehouse:

497 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,4574

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Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	95nC
Max. dissipated power:	250W
Max. collector current:	74A
Max collector current (impulse):	120A
Forvard volatge [Vgeth]:	3,2V ~ 4,8V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	650V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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