IGW50N65F5FKSA1
Symbol Micros:
TIGW50n65f5
Case : TO247
IGBT 650V 80A 305W
Parameters
| Gate charge: | 120nC |
| Max. dissipated power: | 305W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 150A |
| Forvard volatge [Vgeth]: | 3,2V ~ 4,8V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IGW50N65F5FKSA1 RoHS
Case style: TO247
Datasheet
In stock:
50 pcs.
| Quantity of pcs. | 1+ | 5+ | 30+ | 60+ | 120+ |
|---|---|---|---|---|---|
| Net price (EUR) | 4,9684 | 4,4610 | 4,2214 | 4,1748 | 4,1399 |
Manufacturer:: Infineon
Manufacturer part number: IGW50N65F5FKSA1
Case style: TO247
External warehouse:
58 pcs.
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 4,1399 |
Manufacturer:: Infineon
Manufacturer part number: IGW50N65F5FKSA1
Case style: TO247
External warehouse:
880 pcs.
| Quantity of pcs. | 60+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 4,1399 |
| Gate charge: | 120nC |
| Max. dissipated power: | 305W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 150A |
| Forvard volatge [Vgeth]: | 3,2V ~ 4,8V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 650V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | SMD |
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