IGW50N65H5FKSA1

Symbol Micros: TIGW50n65h5

119007

TIGW50n65h5

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 650V 80A 305W

Parameters

Gate charge:	120nC
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Mounting:	SMD
Collector current [Ic]:	80A
Collector-emmiter voltage:	650V

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW50N65H5FKSA1 Case style: TO247  

External warehouse:

138 pcs.

Quantity of pcs.	90+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,8746

Add inquiry (RFQ)

Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IGW50N65H5FKSA1 Case style: TO247  

External warehouse:

129 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,0712

Add to comparison tool Add inquiry (RFQ)

Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	120nC
Case:	TO247
Manufacturer:	Infineon Technologies
Operating temperature (range):	-40°C ~ 175°C
Mounting:	SMD
Collector current [Ic]:	80A
Collector-emmiter voltage:	650V
Gate-Emmiter voltage (Uge):	20V
Ic impulse current:	150A
Power:	305W
Transistor type:	IGBT

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