IGW50N65H5FKSA1

Symbol Micros: TIGW50n65h5
Contractor Symbol:
Case : TO247
IGBT 650V 80A 305W
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Parameters
Gate charge: 120nC
Case: TO247
Manufacturer: Infineon Technologies
Operating temperature (range): -40°C ~ 175°C
Mounting: SMD
Collector current [Ic]: 80A
Collector-emmiter voltage: 650V
Manufacturer:: Infineon Manufacturer part number: IGW50N65H5FKSA1 Case style: TO247  
External warehouse:
138 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,8680
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IGW50N65H5FKSA1 Case style: TO247  
External warehouse:
134 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,4079
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 120nC
Case: TO247
Manufacturer: Infineon Technologies
Operating temperature (range): -40°C ~ 175°C
Mounting: SMD
Collector current [Ic]: 80A
Collector-emmiter voltage: 650V
Gate-Emmiter voltage (Uge): 20V
Ic impulse current: 150A
Power: 305W
Transistor type: IGBT