IGW60T120
Symbol Micros:
TIGW60t120
Case : TO247
IGBT 1200V 100A 375W IGW60T120FKSA1
Parameters
Gate charge: | 280nC |
Max. dissipated power: | 375W |
Max. collector current: | 100A |
Max collector current (impulse): | 150A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Gate charge: | 280nC |
Max. dissipated power: | 375W |
Max. collector current: | 100A |
Max collector current (impulse): | 150A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -40°C ~ 150°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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