IGW75N60T

Symbol Micros: TIGW75n60t

104457

TIGW75n60t

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 150A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C; IGW75N60TFKSA1

Parameters

Gate charge:	470nC
Max. dissipated power:	428W
Max. collector current:	150A
Max collector current (impulse):	225A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IGW75N60TFKSA1 RoHS Case style: TO247 Datasheet

In stock:

35 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	6,1732	5,1916	4,6031	4,3076	4,1432

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	470nC
Max. dissipated power:	428W
Max. collector current:	150A
Max collector current (impulse):	225A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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