IHW15N120R3

Symbol Micros: TIHW15n120r3
Contractor Symbol:
Case : TO247
Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1
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Parameters
Gate charge: 165nC
Max. dissipated power: 254W
Max. collector current: 30A
Max collector current (impulse): 45A
Forvard volatge [Vgeth]: 5,1V ~ 6,4V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IHW15N120R3 RoHS Case style: TO247 Datasheet
In stock:
25 pcs.
Quantity of pcs. 1+ 5+ 30+ 150+ 300+
Net price (EUR) 2,3800 1,8878 1,6762 1,6025 1,5859
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Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IHW15N120R3FKSA1 Case style: TO247  
External warehouse:
55 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,5859
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 165nC
Max. dissipated power: 254W
Max. collector current: 30A
Max collector current (impulse): 45A
Forvard volatge [Vgeth]: 5,1V ~ 6,4V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 1200V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT