IHW15N120R3

Symbol Micros: TIHW15n120r3

104458

TIHW15n120r3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 1200V; 20V; 30A; 45A; 254W; 5,1V~6,4V; 165nC; -40°C~175°C; IHW15N120R3FKSA1

Parameters

Gate charge:	165nC
Max. dissipated power:	254W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IHW15N120R3 RoHS Case style: TO247 Datasheet

In stock:

20 pcs.

Quantity of pcs.	1+	5+	30+	150+	300+
Net price (EUR)	2,3294	1,8477	1,6406	1,5685	1,5522

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IHW15N120R3FKSA1 Case style: TO247  

External warehouse:

205 pcs.

Quantity of pcs.	90+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,5522

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	165nC
Max. dissipated power:	254W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	5,1V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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