IHW20N135R3

Symbol Micros: TIHW20n135r3
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Case : TO247
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40A; 1350V; 310W; IGBT w/ Diode
Parameters
Gate charge: 195nC
Max. dissipated power: 310W
Max. collector current: 40A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 5,1V ~ 6,4V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IHW20N135R3 RoHS Case style: TO247 Datasheet
In stock:
24 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,6350 3,0033 2,6300 2,4468 2,3458
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Packaging:
30
Gate charge: 195nC
Max. dissipated power: 310W
Max. collector current: 40A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 5,1V ~ 6,4V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 1350V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

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