IHW30N160R5XKSA1

Symbol Micros: TIHW30n160r5

250445

TIHW30n160r5

Contractor Symbol:

Case : TO247

Datasheet

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Reverse Conducting IGBT With Monolithic Body Diode IHW30N160R5XKSA1; IHW30N160R5;

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Parameters

Gate charge:	205nC
Max. dissipated power:	263W
Max. collector current:	60A
Max collector current (impulse):	90A
Forvard volatge [Vgeth]:	4,5V ~ 5,8V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IHW30N160R5XKSA1 RoHS Case style: TO247 Datasheet

In stock:

12 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	6,7908	5,7597	5,1254	4,8036	4,6204

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Packaging:
30 Quantity (multiple: 1)

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• Parameters

Gate charge:	205nC
Max. dissipated power:	263W
Max. collector current:	60A
Max collector current (impulse):	90A
Forvard volatge [Vgeth]:	4,5V ~ 5,8V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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