IKD04N60R

Symbol Micros: TIKD04n60r
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Case : TO252 (DPACK)
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8A; 600V; 75W; IGBT w/ Diode
Parameters
Gate charge: 27nC
Max. dissipated power: 75W
Max. collector current: 8A
Max collector current (impulse): 12A
Forvard volatge [Vgeth]: 4,3V ~ 5,7V
Case: TO252 (DPAK)
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKD04N60R RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,1741 0,8947 0,7420 0,6504 0,6176
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Packaging:
50
Gate charge: 27nC
Max. dissipated power: 75W
Max. collector current: 8A
Max collector current (impulse): 12A
Forvard volatge [Vgeth]: 4,3V ~ 5,7V
Case: TO252 (DPAK)
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

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