IKD04N60R
Symbol Micros:
TIKD04n60r
Case : TO252 (DPACK)
Transistor IGBT ; 600V; 20V; 8A; 12A; 75W; 4,3V~5,7V; 27nC; -40°C~175°C;
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 27nC |
Max. dissipated power: | 75W |
Max. collector current: | 8A |
Max collector current (impulse): | 12A |
Forvard volatge [Vgeth]: | 4,3V ~ 5,7V |
Case: | TO252 (DPAK) |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKD04N60R RoHS
Case style: TO252 (DPACK) t/r
Datasheet
In stock:
30 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 50+ | 200+ |
---|---|---|---|---|---|
Net price (EUR) | 1,1741 | 0,8946 | 0,7420 | 0,6504 | 0,6176 |
Manufacturer:: Infineon
Manufacturer part number: IKD04N60RATMA1
Case style: TO252 (DPACK)
External warehouse:
610 pcs.
Quantity of pcs. | 5+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,6176 |
Gate charge: | 27nC |
Max. dissipated power: | 75W |
Max. collector current: | 8A |
Max collector current (impulse): | 12A |
Forvard volatge [Vgeth]: | 4,3V ~ 5,7V |
Case: | TO252 (DPAK) |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | SMD |
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