IKD04N60R

Symbol Micros: TIKD04n60r
Contractor Symbol:
Case : TO252 (DPACK)
Transistor IGBT ; 600V; 20V; 8A; 12A; 75W; 4,3V~5,7V; 27nC; -40°C~175°C;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: 27nC
Max. dissipated power: 75W
Max. collector current: 8A
Max collector current (impulse): 12A
Forvard volatge [Vgeth]: 4,3V ~ 5,7V
Case: TO252 (DPAK)
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKD04N60R RoHS Case style: TO252 (DPACK) t/r Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,1741 0,8946 0,7420 0,6504 0,6176
Add to comparison tool
Packaging:
50
Manufacturer:: Infineon Manufacturer part number: IKD04N60RATMA1 Case style: TO252 (DPACK)  
External warehouse:
610 pcs.
Quantity of pcs. 5+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,6176
Add to comparison tool
Packaging:
5
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 27nC
Max. dissipated power: 75W
Max. collector current: 8A
Max collector current (impulse): 12A
Forvard volatge [Vgeth]: 4,3V ~ 5,7V
Case: TO252 (DPAK)
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: SMD