IKP15N60T

Symbol Micros: TIKP15n60t

105795

TIKP15n60t

Contractor Symbol:

Case : TO220

Datasheet

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Transistor IGBT ; 600V; 20V; 26A; 45A; 130W; 4,1V~5,7V; 87nC; -40°C~175°C; IKP15N60TXKSA1

Parameters

Gate charge:	87nC
Max. dissipated power:	130W
Max. collector current:	26A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKP15N60TXKSA1 RoHS Case style: TO220 Datasheet

In stock:

85 pcs.

Quantity of pcs.	1+	5+	50+	100+	300+
Net price (EUR)	2,1436	1,6473	1,4003	1,3691	1,3404

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Packaging:
50/100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKP15N60TXKSA1 Case style: TO220  

External warehouse:

1900 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,3404

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	87nC
Max. dissipated power:	130W
Max. collector current:	26A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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