IKP15N60T
Symbol Micros:
TIKP15n60t
Case : TO220
30A; 600V; 130W; IGBT w/ Diode IKP15N60TXKSA1
Parameters
Gate charge: | 87nC |
Max. dissipated power: | 130W |
Max. collector current: | 26A |
Max collector current (impulse): | 45A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO220 |
Manufacturer: | Infineon Technologies |
Gate charge: | 87nC |
Max. dissipated power: | 130W |
Max. collector current: | 26A |
Max collector current (impulse): | 45A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO220 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
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