IKP20N60T

Symbol Micros: TIKP20n60t

105796

TIKP20n60t

Contractor Symbol:

Case : TO220

Datasheet

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Transistor IGBT ; 600V; 20V; 41A; 60A; 166W; 4,1V~5,7V; 120nC; -40°C~175°C; IKP20N60TXKSA1

Parameters

Gate charge:	120nC
Max. dissipated power:	166W
Max. collector current:	41A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKP20N60T RoHS Case style: TO220 Datasheet

In stock:

85 pcs.

Quantity of pcs.	1+	5+	50+	100+	200+
Net price (EUR)	2,6226	2,1608	1,9239	1,8952	1,8737

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Packaging:
50/100 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKP20N60TXKSA1 Case style: TO220  

External warehouse:

70 pcs.

Quantity of pcs.	10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,8737

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Packaging:
10

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	120nC
Max. dissipated power:	166W
Max. collector current:	41A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO220
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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