IKP20N60T

Symbol Micros: TIKP20n60t
Contractor Symbol:
Case : TO220
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40A; 600V; 166W; IGBT w/ Diode IKP20N60TXKSA1
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Parameters
Gate charge: 120nC
Max. dissipated power: 166W
Max. collector current: 41A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO220
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKP20N60T RoHS Case style: TO220 Datasheet
In stock:
90 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 200+
Net price (EUR) 2,8641 2,2394 1,9179 1,8762 1,8485
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Packaging:
50/100
Gate charge: 120nC
Max. dissipated power: 166W
Max. collector current: 41A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO220
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V

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