IKP20N60T

Symbol Micros: TIKP20n60t
Contractor Symbol:
Case : TO220
Transistor IGBT ; 600V; 20V; 41A; 60A; 166W; 4,1V~5,7V; 120nC; -40°C~175°C; IKP20N60TXKSA1
Parameters
Gate charge: 120nC
Max. dissipated power: 166W
Max. collector current: 41A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO220
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKP20N60T RoHS Case style: TO220 Datasheet
In stock:
85 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 200+
Net price (EUR) 2,6226 2,1608 1,9239 1,8952 1,8737
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Packaging:
50/100
Manufacturer:: Infineon Manufacturer part number: IKP20N60TXKSA1 Case style: TO220  
External warehouse:
70 pcs.
Quantity of pcs. 10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,8737
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 120nC
Max. dissipated power: 166W
Max. collector current: 41A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO220
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT