IKW15N120H3FKSA1

Symbol Micros: TIKW15n120h3

112051

TIKW15n120h3

Contractor Symbol:

Case : TO247

Datasheet

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Trans IGBT ; 1200V; 20V; 30A; 60A; 217W; 5,0V~6,5V; 75nC; -40°C~175°C; Replacement: IKW15N120H3FKSA1; IKW15N120H3;

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Parameters

Gate charge:	75nC
Max. dissipated power:	217W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW15N120H3FKSA1 RoHS Case style: TO247 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	4,0053	3,5606	3,2937	3,1603	3,0807

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Packaging:
10 Quantity (multiple: 1)

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• Parameters

Gate charge:	75nC
Max. dissipated power:	217W
Max. collector current:	30A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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