IKW15T120

Symbol Micros: TIKW15t120

112052

TIKW15t120

Contractor Symbol:

Case : TO247

Datasheet

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IGBT 1200V 30A 110W IKW15T120FKSA1

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Parameters

Gate charge:	85nC
Max. dissipated power:	110W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW15T120FKSA1 Case style: TO247  

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71 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,0719

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	85nC
Max. dissipated power:	110W
Max. collector current:	30A
Max collector current (impulse):	45A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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