IKW20N60T

Symbol Micros: TIKW20n60t
Contractor Symbol:
Case : TO247
Transistor IGBT ; 600V; 20V; 40A; 60A; 166W; 4,1V~5,7V; 120nC; -40°C~175°C;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: 120nC
Max. dissipated power: 166W
Max. collector current: 40A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW20N60TFKSA1 RoHS Case style: TO247 Datasheet
In stock:
15 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,6220 3,0464 2,7001 2,5270 2,4310
Add to comparison tool
Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IKW20N60TFKSA1 Case style: TO247  
External warehouse:
150 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,4310
Add to comparison tool
Packaging:
240
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IKW20N60TFKSA1 Case style: TO247  
External warehouse:
147 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,4310
Add to comparison tool
Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IKW20N60TFKSA1 Case style: TO247  
External warehouse:
427 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 2,4310
Add to comparison tool
Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 120nC
Max. dissipated power: 166W
Max. collector current: 40A
Max collector current (impulse): 60A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT