IKW20N60T

Symbol Micros: TIKW20n60t

104461

TIKW20n60t

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 40A; 60A; 166W; 4,1V~5,7V; 120nC; -40°C~175°C;

Parameters

Gate charge:	120nC
Max. dissipated power:	166W
Max. collector current:	40A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW20N60TFKSA1 RoHS Case style: TO247 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,6507	3,0705	2,7215	2,5470	2,4503

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKW20N60TFKSA1 Case style: TO247  

External warehouse:

113 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,4503

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	120nC
Max. dissipated power:	166W
Max. collector current:	40A
Max collector current (impulse):	60A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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