IKW25N120T2
Symbol Micros:
TIKW25n120t2
Case : TO247
Transistor IGBT ; 1200V; 20V; 50A; 100A; 349W; 5,2V~6,4V; 120nC; -40°C~175°C;
Parameters
| Gate charge: | 120nC |
| Max. dissipated power: | 349W |
| Max. collector current: | 50A |
| Max collector current (impulse): | 100A |
| Forvard volatge [Vgeth]: | 5,2V ~ 6,4V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW25N120T2FKSA1 RoHS
Case style: TO247
Datasheet
In stock:
6 pcs.
| Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
|---|---|---|---|---|---|
| Net price (EUR) | 6,0426 | 5,0817 | 4,5057 | 4,2165 | 4,0556 |
Manufacturer:: Infineon
Manufacturer part number: IKW25N120T2FKSA1
Case style: TO247
External warehouse:
5783 pcs.
| Quantity of pcs. | 60+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 4,0556 |
Manufacturer:: Infineon
Manufacturer part number: IKW25N120T2FKSA1
Case style: TO247
External warehouse:
593 pcs.
| Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 4,0556 |
| Gate charge: | 120nC |
| Max. dissipated power: | 349W |
| Max. collector current: | 50A |
| Max collector current (impulse): | 100A |
| Forvard volatge [Vgeth]: | 5,2V ~ 6,4V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 1200V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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