IKW25T120

Symbol Micros: TIKW25t120

112048

TIKW25t120

Contractor Symbol:

Case : TO247

Datasheet

Technical drawing

1200V 50A 190W IKW25T120FKSA1 INFINEON

Parameters

Gate charge:	155nC
Max. dissipated power:	190W
Max. collector current:	50A
Max collector current (impulse):	75A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW25T120FKSA1 RoHS Case style: TO247 Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	4,3866	3,9002	3,6070	3,4627	3,3743

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Packaging:
10 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKW25T120FKSA1 Case style: TO247  

External warehouse:

180 pcs.

Quantity of pcs.	60+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,3743

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Packaging:
30

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IKW25T120FKSA1 Case style: TO247  

External warehouse:

168 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,6318

Add to comparison tool Add inquiry (RFQ)

Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	155nC
Max. dissipated power:	190W
Max. collector current:	50A
Max collector current (impulse):	75A
Forvard volatge [Vgeth]:	5,0V ~ 6,5V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 150°C
Gate-emitter voltage:	20V
Mounting:	THT

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