IKW30N60H3
Symbol Micros:
TIKW30n60h3
Case : TO247
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 165nC |
Max. dissipated power: | 187W |
Max. collector current: | 60A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW30N60H3 RoHS
Case style: TO247
Datasheet
In stock:
41 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
---|---|---|---|---|---|
Net price (EUR) | 2,6555 | 2,2833 | 2,0628 | 1,9561 | 1,8968 |
Manufacturer:: Infineon
Manufacturer part number: IKW30N60H3FKSA1
Case style: TO247
External warehouse:
356 pcs.
Quantity of pcs. | 30+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 1,8968 |
Gate charge: | 165nC |
Max. dissipated power: | 187W |
Max. collector current: | 60A |
Max collector current (impulse): | 120A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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