IKW30N60H3

Symbol Micros: TIKW30n60h3
Contractor Symbol:
Case : TO247
Transistor IGBT ; 600V; 20V; 60A; 120A; 187W; 4,1V~5,7V; 165nC; -40°C~175°C;
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Parameters
Gate charge: 165nC
Max. dissipated power: 187W
Max. collector current: 60A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW30N60H3 RoHS Case style: TO247 Datasheet
In stock:
41 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 2,6555 2,2833 2,0628 1,9561 1,8968
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Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IKW30N60H3FKSA1 Case style: TO247  
External warehouse:
356 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 1,8968
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 165nC
Max. dissipated power: 187W
Max. collector current: 60A
Max collector current (impulse): 120A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT