IKW40N120H3

Symbol Micros: TIKW40n120h3
Contractor Symbol:
Case : TO247
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;
Parameters
Gate charge: 185nC
Max. dissipated power: 483W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 5,0V ~ 6,5V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW40N120H3 RoHS Case style: TO247 Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 5,6052 5,1621 4,8882 4,7500 4,6714
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Packaging:
30/90
Manufacturer:: Infineon Manufacturer part number: IKW40N120H3FKSA1 Case style: TO247  
External warehouse:
88 pcs.
Quantity of pcs. 1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 7,0368
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IKW40N120H3FKSA1 Case style: TO247  
External warehouse:
5641 pcs.
Quantity of pcs. 30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 4,6714
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Packaging:
30
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 185nC
Max. dissipated power: 483W
Max. collector current: 80A
Max collector current (impulse): 160A
Forvard volatge [Vgeth]: 5,0V ~ 6,5V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 1200V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V
Mounting: THT