IKW40N120H3
Symbol Micros:
TIKW40n120h3
Case : TO247
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;
Parameters
Gate charge: | 185nC |
Max. dissipated power: | 483W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW40N120H3 RoHS
Case style: TO247
Datasheet
In stock:
50 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
---|---|---|---|---|---|
Net price (EUR) | 5,6052 | 5,1621 | 4,8882 | 4,7500 | 4,6714 |
Manufacturer:: Infineon
Manufacturer part number: IKW40N120H3FKSA1
Case style: TO247
External warehouse:
88 pcs.
Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 7,0368 |
Manufacturer:: Infineon
Manufacturer part number: IKW40N120H3FKSA1
Case style: TO247
External warehouse:
5641 pcs.
Quantity of pcs. | 30+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 4,6714 |
Gate charge: | 185nC |
Max. dissipated power: | 483W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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