IKW40N120H3
Symbol Micros:
TIKW40n120h3
Case : TO247
Transistor IGBT ; 1200V; 20V; 80A; 160A; 483W; 5,0V~6,5V; 185nC; -40°C~175°C;
Any questions? We will be happy to answer.
Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 185nC |
Max. dissipated power: | 483W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW40N120H3 RoHS
Case style: TO247
Datasheet
In stock:
50 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
---|---|---|---|---|---|
Net price (EUR) | 5,5694 | 5,1291 | 4,8569 | 4,7196 | 4,6415 |
Manufacturer:: Infineon
Manufacturer part number: IKW40N120H3FKSA1
Case style: TO247
External warehouse:
128 pcs.
Quantity of pcs. | 1+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 7,0473 |
Gate charge: | 185nC |
Max. dissipated power: | 483W |
Max. collector current: | 80A |
Max collector current (impulse): | 160A |
Forvard volatge [Vgeth]: | 5,0V ~ 6,5V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 1200V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
Mounting: | THT |
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