IKW40N120T2

Symbol Micros: TIKW40n120t2

Case : TO247

Trans IGBT Chip N-CH 1.2KV 75A IKW40N120T2FKSA1

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Parameters

Gate charge:	192nC
Max. dissipated power:	480W
Max. collector current:	75A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	5,2V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies

Manufacturer:: Infineon Manufacturer part number: IKW40N120T2 RoHS Case style: TO247 Datasheet

In stock:

25 pcs.

Quantity of pcs.	1+	5+	25+	50+	100+
Net price (EUR)	8,6576	7,0702	6,3494	6,1756	6,0535

Manufacturer:: Infineon Manufacturer part number: IKW40N120T2FKSA1 Case style: TO247

External warehouse:

254 pcs.

Quantity of pcs.	30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	6,0535

Gate charge:	192nC
Max. dissipated power:	480W
Max. collector current:	75A
Max collector current (impulse):	160A
Forvard volatge [Vgeth]:	5,2V ~ 6,4V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	1200V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT