IKW50N60H3

Symbol Micros: TIKW50n60h3

104466

TIKW50n60h3

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT ; 600V; 20V; 100A; 200A; 333W; 4,1V~5,7V; 315nC; -40°C~175°C;

Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max. collector current:	100A
Max collector current (impulse):	200A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

All parameters

Manufacturer:: Infineon Manufacturer part number: IKW50N60H3 RoHS Case style: TO247 Datasheet

In stock:

40 pcs.

Quantity of pcs.	1+	3+	10+	30+	90+
Net price (EUR)	3,2754	2,8157	2,5441	2,4131	2,3393

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Packaging:
30 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IKW50N60H3FKSA1 Case style: TO247  

External warehouse:

11 pcs.

Quantity of pcs.	1+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	3,8289

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Packaging:
1

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Gate charge:	315nC
Max. dissipated power:	333W
Max. collector current:	100A
Max collector current (impulse):	200A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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