IKW50N60H3

Symbol Micros: TIKW50n60h3
Contractor Symbol:
Case : TO247
100A; 600V; 333W; IGBT w/ Diode
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Parameters
Gate charge: 315nC
Max. dissipated power: 333W
Max. collector current: 100A
Max collector current (impulse): 200A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Manufacturer:: Infineon Manufacturer part number: IKW50N60H3 RoHS Case style: TO247 Datasheet
In stock:
15 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 90+
Net price (EUR) 3,0723 2,7297 2,5245 2,4220 2,3637
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Packaging:
30
Manufacturer:: Infineon Manufacturer part number: IKW50N60H3FKSA1 Case style: TO247  
External warehouse:
155 pcs.
Quantity of pcs. 240+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 3,1555
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Packaging:
240
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IKW50N60H3FKSA1 Case style: TO247  
External warehouse:
26 pcs.
Quantity of pcs. 1+ (Inappropriate quantity? Ask for a different one).
Net price (EUR) 3,8316
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Packaging:
1
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Gate charge: 315nC
Max. dissipated power: 333W
Max. collector current: 100A
Max collector current (impulse): 200A
Forvard volatge [Vgeth]: 4,1V ~ 5,7V
Case: TO247
Manufacturer: Infineon Technologies
Collector-emitter voltage: 600V
Operating temperature (range): -40°C ~ 175°C
Gate-emitter voltage: 20V