IKW50N60H3
Symbol Micros:
TIKW50n60h3
Case : TO247
100A; 600V; 333W; IGBT w/ Diode
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
Gate charge: | 315nC |
Max. dissipated power: | 333W |
Max. collector current: | 100A |
Max collector current (impulse): | 200A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60H3 RoHS
Case style: TO247
Datasheet
In stock:
15 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 90+ |
---|---|---|---|---|---|
Net price (EUR) | 3,0723 | 2,7297 | 2,5245 | 2,4220 | 2,3637 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60H3FKSA1
Case style: TO247
External warehouse:
155 pcs.
Quantity of pcs. | 240+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 3,1555 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60H3FKSA1
Case style: TO247
External warehouse:
26 pcs.
Quantity of pcs. | 1+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 3,8316 |
Gate charge: | 315nC |
Max. dissipated power: | 333W |
Max. collector current: | 100A |
Max collector current (impulse): | 200A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
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