IKW50N60T
Symbol Micros:
TIKW50n60t
Case : TO247
Trans IGBT Chip N-CH 600V 80A 333000mW Automotive 3-Pin(3+Tab)TO247 IKW50N60TFKSA1
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Parameters
Gate charge: | 310nC |
Max. dissipated power: | 333W |
Max. collector current: | 80A |
Max collector current (impulse): | 150A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60T RoHS
Case style: TO247
Datasheet
In stock:
10 pcs.
Quantity of pcs. | 1+ | 3+ | 10+ | 30+ | 100+ |
---|---|---|---|---|---|
Net price (EUR) | 5,8232 | 4,9021 | 4,3495 | 4,0732 | 3,9074 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60T RoHS
Case style: TO247
Datasheet
In stock:
10 pcs.
Quantity of pcs. | 1+ | 5+ | 30+ | 90+ | 180+ |
---|---|---|---|---|---|
Net price (EUR) | 5,8232 | 4,6535 | 4,1170 | 3,9673 | 3,9074 |
Manufacturer:: Infineon
Manufacturer part number: IKW50N60TFKSA1
Case style: TO247
External warehouse:
167 pcs.
Quantity of pcs. | 1+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 3,9074 |
Gate charge: | 310nC |
Max. dissipated power: | 333W |
Max. collector current: | 80A |
Max collector current (impulse): | 150A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
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