IKW50N65H5
Symbol Micros:
TIKW50n65h5
Case : TO247
80A; 650V; 305W; IGBT w/ Diode
Parameters
| Gate charge: | 120nC |
| Max. dissipated power: | 305W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 150A |
| Forvard volatge [Vgeth]: | 3,2V ~ 4,8V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Gate charge: | 120nC |
| Max. dissipated power: | 305W |
| Max. collector current: | 80A |
| Max collector current (impulse): | 150A |
| Forvard volatge [Vgeth]: | 3,2V ~ 4,8V |
| Case: | TO247 |
| Manufacturer: | Infineon Technologies |
| Collector-emitter voltage: | 600V |
| Operating temperature (range): | -40°C ~ 175°C |
| Gate-emitter voltage: | 20V |
| Mounting: | THT |
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