IKW75N60T

Symbol Micros: TIKW75n60t

Case : TO247

Transistor IGBT ; 600V; 20V; 80A; 225A; 428W; 4,1V~5,7V; 470nC; -40°C~175°C;

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Parameters

Gate charge:	470nC
Max. dissipated power:	428W
Max. collector current:	80A
Max collector current (impulse):	225A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies

Manufacturer:: Infineon Manufacturer part number: IKW75N60TFKSA1 RoHS Case style: TO247 Datasheet

In stock:

8 pcs.

Quantity of pcs.	1+	5+	30+	60+	120+
Net price (EUR)	7,7502	6,2334	5,5161	5,3731	5,2723

Manufacturer:: Infineon Manufacturer part number: IKW75N60TFKSA1 Case style: TO247

External warehouse:

591 pcs.

Quantity of pcs.	30+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	5,2723

Manufacturer:: Infineon Manufacturer part number: IKW75N60TFKSA1 Case style: TO247

External warehouse:

20 pcs.

Quantity of pcs.	5+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	5,7630

Gate charge:	470nC
Max. dissipated power:	428W
Max. collector current:	80A
Max collector current (impulse):	225A
Forvard volatge [Vgeth]:	4,1V ~ 5,7V
Case:	TO247
Manufacturer:	Infineon Technologies
Collector-emitter voltage:	600V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT