IKW75N60T
Symbol Micros:
TIKW75n60t
Case : TO247
80A; 600V; 428W; IGBT w/ Diode
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Parameters
Gate charge: | 470nC |
Max. dissipated power: | 428W |
Max. collector current: | 80A |
Max collector current (impulse): | 225A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Manufacturer:: Infineon
Manufacturer part number: IKW75N60TFKSA1 RoHS
Case style: TO247
Datasheet
In stock:
18 pcs.
Quantity of pcs. | 1+ | 5+ | 30+ | 60+ | 120+ |
---|---|---|---|---|---|
Net price (EUR) | 7,6054 | 6,1170 | 5,4131 | 5,2727 | 5,1738 |
Manufacturer:: Infineon
Manufacturer part number: IKW75N60TFKSA1
Case style: TO247
External warehouse:
621 pcs.
Quantity of pcs. | 1+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 5,1738 |
Manufacturer:: Infineon
Manufacturer part number: IKW75N60TFKSA1
Case style: TO247
External warehouse:
20 pcs.
Quantity of pcs. | 5+ (Inappropriate quantity? Ask for a different one). |
---|---|
Net price (EUR) | 5,7402 |
Gate charge: | 470nC |
Max. dissipated power: | 428W |
Max. collector current: | 80A |
Max collector current (impulse): | 225A |
Forvard volatge [Vgeth]: | 4,1V ~ 5,7V |
Case: | TO247 |
Manufacturer: | Infineon Technologies |
Collector-emitter voltage: | 600V |
Operating temperature (range): | -40°C ~ 175°C |
Gate-emitter voltage: | 20V |
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