IKWH100N65EH

Symbol Micros: TIKWH100N65EH

409993

TIKWH100N65EH

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT; 650V; 20V; 199nC; 140A; 427W; -40°C~175°C;

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Parameters

Gate charge:	199nC
Max. dissipated power:	427W
Max. collector current:	140A
Max collector current (impulse):	400A
Case:	TO247
Manufacturer:	INFINEON
Collector-emitter voltage:	650V

All parameters

         

 

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• Parameters

Gate charge:	199nC
Max. dissipated power:	427W
Max. collector current:	140A
Max collector current (impulse):	400A
Case:	TO247
Manufacturer:	INFINEON
Collector-emitter voltage:	650V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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