IKWH40N65EH7

Symbol Micros: TIKWH40N65EH7

409994

TIKWH40N65EH7

Contractor Symbol:

Case : TO247

Datasheet

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Transistor IGBT; 650V; 20V; 81nC; 80A; 208W; -40°C~175°C;

Parameters

Gate charge:	81nC
Max. dissipated power:	208W
Max. collector current:	80A
Max collector current (impulse):	160A
Case:	TO247
Manufacturer:	INFINEON
Collector-emitter voltage:	650V

All parameters

         

 

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• Parameters

Gate charge:	81nC
Max. dissipated power:	208W
Max. collector current:	80A
Max collector current (impulse):	160A
Case:	TO247
Manufacturer:	INFINEON
Collector-emitter voltage:	650V
Operating temperature (range):	-40°C ~ 175°C
Gate-emitter voltage:	20V
Mounting:	THT

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