IMBF170R1K0M1

Symbol Micros: TIMBF170R1K0M1

358802

TIMBF170R1K0M1

Contractor Symbol:

Case : TO263

Datasheet

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Transistor N-MOSFET; 1700V; 20V; 2,037Ohm; 5,2A; 68W; -55°C ~ 175°C; Substitute: IMBF170R1K0M1XTMA1;

Parameters

Open channel resistance:	2,037Ohm
Max. drain current:	5,2A
Max. power loss:	68W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1700V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Infineon Manufacturer part number: IMBF170R1K0M1XTMA1 Case style: TO263  

External warehouse:

1000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,9691

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	2,037Ohm
Max. drain current:	5,2A
Max. power loss:	68W
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	1700V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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