IPB019N08N3 G

Symbol Micros: TIPB019n08n3

83808

TIPB019n08n3

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Datasheet

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N-MOSFET 180A 80V 300W 0.0019Ω

Parameters

Open channel resistance:	1,9mOhm
Max. drain current:	100A
Max. power loss:	300W
Case:	TO263/7
Manufacturer:	Infineon
Max. drain-source voltage:	80V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPB019N08N3GATMA1 Case style: TO263/7  

External warehouse:

4000 pcs.

Quantity of pcs.	1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	2,0100

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	1,9mOhm
Max. drain current:	100A
Max. power loss:	300W
Case:	TO263/7
Manufacturer:	Infineon
Max. drain-source voltage:	80V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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