IPB090N06N3G INFINEON

Symbol Micros: TIPB090n06n3
Contractor Symbol:
Case : TO263/3
N-MOSFET 60V 50A 71W 9mΩ
Parameters
Open channel resistance: 9,3mOhm
Max. drain current: 50A
Max. power loss: 71W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPB090N06N3G RoHS Case style: TO263/3 Datasheet
In stock:
126 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8715 0,5514 0,4346 0,3972 0,3785
Add to comparison tool
Packaging:
200
Manufacturer:: Infineon Manufacturer part number: IPB090N06N3GATMA1 Case style: TO263/3  
External warehouse:
4000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3785
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Infineon Manufacturer part number: IPB090N06N3GATMA1 Case style: TO263/3  
External warehouse:
4000 pcs.
Quantity of pcs. 1000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3785
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 9,3mOhm
Max. drain current: 50A
Max. power loss: 71W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 60V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD