IPB090N06N3G INFINEON
Symbol Micros:
TIPB090n06n3
Case : TO263/3
N-MOSFET 60V 50A 71W 9mΩ
Parameters
Open channel resistance: | 9,3mOhm |
Max. drain current: | 50A |
Max. power loss: | 71W |
Case: | TO263/3 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IPB090N06N3G RoHS
Case style: TO263/3
Datasheet
In stock:
126 pcs.
Quantity of pcs. | 2+ | 10+ | 50+ | 200+ | 1000+ |
---|---|---|---|---|---|
Net price (EUR) | 0,8715 | 0,5514 | 0,4346 | 0,3972 | 0,3785 |
Manufacturer:: Infineon
Manufacturer part number: IPB090N06N3GATMA1
Case style: TO263/3
External warehouse:
4000 pcs.
Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,3785 |
Manufacturer:: Infineon
Manufacturer part number: IPB090N06N3GATMA1
Case style: TO263/3
External warehouse:
4000 pcs.
Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,3785 |
Open channel resistance: | 9,3mOhm |
Max. drain current: | 50A |
Max. power loss: | 71W |
Case: | TO263/3 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 60V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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