IPB107N20N3G INFINEON

Symbol Micros: TIPB107n20n3g
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Case : TO263/3
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N-MOSFET 200V 88A 300W 10.7mΩ
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Parameters
Open channel resistance: 11mOhm
Max. drain current: 88A
Max. power loss: 300W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPB107N20N3G RoHS Case style: TO263/3 Datasheet
In stock:
15 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 200+
Net price (EUR) 4,1638 3,5794 3,3526 3,2310 3,2030
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Packaging:
20
Open channel resistance: 11mOhm
Max. drain current: 88A
Max. power loss: 300W
Case: TO263/3
Manufacturer: Infineon Technologies
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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