IPB107N20N3G INFINEON
Symbol Micros:
TIPB107n20n3g
Case : TO263/3
Tranzystor N-Channel MOSFET; 200V; 20V; 11mOhm; 88A; 300W; -55°C ~ 175°C; Odpowiednik: IPB107N20N3GATMA1;
Parameters
| Open channel resistance: | 11mOhm |
| Max. drain current: | 88A |
| Max. power loss: | 300W |
| Case: | TO263/3 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 200V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IPB107N20N3G RoHS
Case style: TO263/3
Datasheet
In stock:
15 pcs.
| Quantity of pcs. | 1+ | 5+ | 20+ | 100+ | 200+ |
|---|---|---|---|---|---|
| Net price (EUR) | 4,3341 | 3,7270 | 3,4911 | 3,3627 | 3,3347 |
Manufacturer:: Infineon
Manufacturer part number: IPB107N20N3GATMA1
Case style: TO263/3
External warehouse:
5000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 3,3347 |
Manufacturer:: Infineon
Manufacturer part number: IPB107N20N3GATMA1
Case style: TO263/3
External warehouse:
26000 pcs.
| Quantity of pcs. | 1000+ (Need a significantly larger quantity? Ask for price). |
|---|---|
| Net price (EUR) | 3,3347 |
| Open channel resistance: | 11mOhm |
| Max. drain current: | 88A |
| Max. power loss: | 300W |
| Case: | TO263/3 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 200V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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