IPD60R280CFD7ATMA1 

Symbol Micros: TIPD60r280cfd7

171912

TIPD60r280cfd7

Contractor Symbol:

Case : TO252/3 (DPAK)

Datasheet

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Transistor N-Channel MOSFET; 650V; 20V; 280mOhm; 9A; 51W; -55°C~150°C;

Parameters

Open channel resistance:	280mOhm
Max. drain current:	9A
Max. power loss:	51W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IPD60R280CFD7ATMA1 Case style: TO252/3 (DPAK)  

External warehouse:

2500 pcs.

Quantity of pcs.	2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,7844

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Packaging:
2500

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	280mOhm
Max. drain current:	9A
Max. power loss:	51W
Case:	DPAK
Manufacturer:	INFINEON
Max. drain-source voltage:	650V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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