IPD60R280P7S Infineon Technologies
Symbol Micros:
TIPD60r280p7s
Case : TO252
MOSFET N-CH 600V 12A TO252-3 IPD60R280P7SAUMA1
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Write sales // micros.com.pl or call: +48 785 054 437
Write sales // micros.com.pl or call: +48 785 054 437
Parameters
| Open channel resistance: | 501mOhm |
| Max. drain current: | 12A |
| Max. power loss: | 53W |
| Case: | TO252 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 501mOhm |
| Max. drain current: | 12A |
| Max. power loss: | 53W |
| Case: | TO252 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 650V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -40°C ~ 150°C |
| Mounting: | SMD |
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