IPD60R3K3C6 Infineon Tech

Symbol Micros: TIPD60r3k3c6
Contractor Symbol:
Case : TO252
N-MOSFET 600V 1.7A 18.1W 3.3Ω
Parameters
Open channel resistance: 7,72Ohm
Max. drain current: 1,7A
Max. power loss: 18,1W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPD60R3K3C6ATMA1 Case style: TO252  
External warehouse:
5000 pcs.
Quantity of pcs. 2500+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,2218
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Packaging:
2500
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 7,72Ohm
Max. drain current: 1,7A
Max. power loss: 18,1W
Case: TO252
Manufacturer: Infineon Technologies
Max. drain-source voltage: 650V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD