IPD60R3K3C6 Infineon Tech
Symbol Micros:
TIPD60r3k3c6
Case : TO252
N-MOSFET 600V 1.7A 18.1W 3.3Ω
Parameters
Open channel resistance: | 7,72Ohm |
Max. drain current: | 1,7A |
Max. power loss: | 18,1W |
Case: | TO252 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IPD60R3K3C6ATMA1
Case style: TO252
External warehouse:
5000 pcs.
Quantity of pcs. | 2500+ (Need a significantly larger quantity? Ask for price). |
---|---|
Net price (EUR) | 0,2218 |
Open channel resistance: | 7,72Ohm |
Max. drain current: | 1,7A |
Max. power loss: | 18,1W |
Case: | TO252 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 650V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 30V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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