IPD70N10S3L-12 Infineon

Symbol Micros: TIPD70n10s3l-12

113956

TIPD70n10s3l-12

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Case : TO252

Datasheet

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N-MOSFET 100V 70A 125W 11.5mΩ

Parameters

Open channel resistance:	15,2mOhm
Max. drain current:	70A
Max. power loss:	125W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	15,2mOhm
Max. drain current:	70A
Max. power loss:	125W
Case:	TO252
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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