IDP78CN10NG TO252-3
Symbol Micros:
TIPD78cn10n
Case : TO252/3 (DPAK)
N-MOSFET 100V 13A 31W 78mΩ
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Parameters
Open channel resistance: | 80mOhm |
Max. drain current: | 13A |
Max. power loss: | 31W |
Case: | TO252/3 (DPAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Open channel resistance: | 80mOhm |
Max. drain current: | 13A |
Max. power loss: | 31W |
Case: | TO252/3 (DPAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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