IDP78CN10NG TO252-3

Symbol Micros: TIPD78cn10n
Contractor Symbol:
Case : TO252/3 (DPAK)
N-MOSFET 100V 13A 31W 78mΩ
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Parameters
Open channel resistance: 80mOhm
Max. drain current: 13A
Max. power loss: 31W
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Infineon Manufacturer part number: IPD78CN10NGATMA1 RoHS Case style: TO252/3 (DPAK) Datasheet
In stock:
55 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6406 0,4021 0,3343 0,2969 0,2782
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Packaging:
100
Open channel resistance: 80mOhm
Max. drain current: 13A
Max. power loss: 31W
Case: TO252/3 (DPAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD